Abstract
Different compositions of Si-Ge nanowires (SGNWs) have been fabricated by Vapor Liquid Solid (VLS) mechanism by using Ni as a catalyst with different SiCl4: GeCl4 ratios and temperatures respectively. The SEM results show that the SGNWs could be grown successfully vertical on the surface of the silicon with temperatures of 1000oC, 950oC, 900oC and 850oC. But for 900oC and 850oC, some of the NWs were observed to be grown as flower like structures instead of vertical. The growth rates are observed to be depending upon the ratio and the flowing times of the precursors greatly. For equal ratio of precursors (SiCl4: GeCl4=1:1) and the precursors’ flowing times of 5 min and 10 min, the growth rates of the SGNWs were observed to be around 20um/min and 30um/min respectively. The SEM results showed that the SGNWs could be grown successfully, vertical on the surface of the silicon with varying temperatures. Keywords: SiGe Nanowire, growth rate, optical characteristics.
Aqeel Ahmed Shah, Zhongyi Guo, Ali Dad Chandio, Yanjun Xiao, Sangwon Jee, S. A. Moiz, Qurban A. Shah, Jung -Ho Lee. (2010) Fabrication of Si-Ge Nanowires, NUST Journal of Engineering Sciences , Volume 3, Issue 1.
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